Two-dimensional devices and integration towards the silicon lines
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
The future of two-dimensional semiconductors beyond Moore's law
The primary challenge facing silicon-based electronics, crucial for modern technological
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
progress, is difficulty in dimensional scaling. This stems from a severe deterioration of …
Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies
Two-dimensional transition metal dichalcogenides could potentially be used to create
transistors that are scaled beyond the capabilities of silicon devices. However, despite …
transistors that are scaled beyond the capabilities of silicon devices. However, despite …
[HTML][HTML] Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration
The practical application of two-dimensional (2D) semiconductors for high-performance
electronics requires the integration with large-scale and high-quality dielectrics—which …
electronics requires the integration with large-scale and high-quality dielectrics—which …
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices
Van der Waals coupling with different stacking configurations is emerging as a powerful
method to tune the optical and electronic properties of atomically thin two-dimensional …
method to tune the optical and electronic properties of atomically thin two-dimensional …
[HTML][HTML] Challenges for nanoscale CMOS logic based on two-dimensional materials
For ultra-scaled technology nodes at channel lengths below 12 nm, two-dimensional (2D)
materials are a potential replacement for silicon since even atomically thin 2D …
materials are a potential replacement for silicon since even atomically thin 2D …
Atomic‐scale interface engineering for two‐dimensional materials based field‐effect transistors
Abstract Two‐dimensional (2D) materials with free of dangling bonds have the potential to
serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due …
serve as ideal channel materials for the next generation of field‐effect transistors (FETs) due …
Dielectric material technologies for 2-D semiconductor transistor scaling
The 2-D semiconductors have been recognized as promising channel materials for the
ultimately scaled transistor technologies beyond silicon. An essential technology enabler for …
ultimately scaled transistor technologies beyond silicon. An essential technology enabler for …
From lab to fab: path forward for 2D material electronics
The increasing demand for computation requires the development of energy-efficient logic
devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are …
devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are …
Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe2 P-Type Field-Effect Transistors
Recent technology development of logic devices based on 2-D semiconductors such as
MoS2, WS2, and WSe2 has triggered great excitement, paving the way to practical …
MoS2, WS2, and WSe2 has triggered great excitement, paving the way to practical …