Silicon carbide and diamond for high temperature device applications
M Willander, M Friesel, Q Wahab… - Journal of Materials …, 2006 - Springer
The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …
diamond make these materials an ideal choice for device fabrication for applications in …
Origin of surface conductivity in diamond
Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that is commonly
attributed to the direct action of hydrogen-related acceptors. We give experimental evidence …
attributed to the direct action of hydrogen-related acceptors. We give experimental evidence …
Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
The electron affinity (EA) χ of single crystal diamond (100) is determined as a function of
hydrogen and oxygen coverage by a combination of work function and photoemission …
hydrogen and oxygen coverage by a combination of work function and photoemission …
Surface transfer doping of diamond
J Ristein - Journal of Physics D: Applied Physics, 2006 - iopscience.iop.org
Hydrogen-terminated diamond can exhibit a pronounced two-dimensional hole conductivity
when it is exposed to appropriate adsorbates. This phenomenon was first encountered in …
when it is exposed to appropriate adsorbates. This phenomenon was first encountered in …
The boron acceptor in diamond
K Thonke - Semiconductor science and technology, 2003 - iopscience.iop.org
To date, the only dopant available for bulk diamond with good controllability is boron, which
acts as an acceptor and can be incorporated in relatively high concentrations, allowing the …
acts as an acceptor and can be incorporated in relatively high concentrations, allowing the …
Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator
W Fei, T Bi, M Iwataki, S Imanishi… - Applied Physics …, 2020 - pubs.aip.org
During selective epitaxial growth of diamond through SiO 2 masks, silicon terminations were
formed on a diamond surface by replacing oxygen terminations under the masks. The high …
formed on a diamond surface by replacing oxygen terminations under the masks. The high …
Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
M Zhang, W Wang, S Fan, G Chen, HN Abbasi, F Lin… - Carbon, 2021 - Elsevier
The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect
transistor (FET) with 5 nm Al 2 O 3 dielectric layer has been successfully fabricated and …
transistor (FET) with 5 nm Al 2 O 3 dielectric layer has been successfully fabricated and …
High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation
H Kawarada - Japanese Journal of Applied Physics, 2012 - iopscience.iop.org
Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs
(MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface …
(MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface …
C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation
X Zhu, T Bi, X Yuan, Y Chang, R Zhang, Y Fu, J Tu… - Applied Surface …, 2022 - Elsevier
In this paper, a diamond-silicon (C-Si) interface was constructed on a (1 1 1) diamond
substrate by annealing the SiO 2 gate insulator in a reductive atmosphere. Corresponding …
substrate by annealing the SiO 2 gate insulator in a reductive atmosphere. Corresponding …
High-frequency performance of diamond field-effect transistor
H Taniuchi, H Umezawa, T Arima… - IEEE Electron …, 2001 - ieeexplore.ieee.org
The microwave performance of a diamond metal-semiconductor field-effect transistor
(MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source …
(MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source …