Atomic switch: atom/ion movement controlled devices for beyond Von‐Neumann computers
An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and
their reduction/oxidation processes in the switching operation to form/annihilate a …
their reduction/oxidation processes in the switching operation to form/annihilate a …
Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption
The advanced progress of electronic-based devices for artificial neural networks and recent
trends in neuromorphic engineering are discussed in this review. Recent studies indicate …
trends in neuromorphic engineering are discussed in this review. Recent studies indicate …
Controlling the Synaptic Plasticity of a Cu2S Gap‐Type Atomic Switch
It is demonstrated that a Cu2S gap‐type atomic switch, referred to as a Cu2S inorganic
synapse, emulates the synaptic plasticity underlying the sensory, short‐term, and long‐term …
synapse, emulates the synaptic plasticity underlying the sensory, short‐term, and long‐term …
Conductance quantization in oxygen-anion-migration-based resistive switching memory devices
C Chen, S Gao, F Zeng, GY Wang, SZ Li… - Applied Physics …, 2013 - pubs.aip.org
Quantized conductance was observed in an anion-migration-based resistive switching
memory cell with the structure of (Ti, Ta, W)/Ta 2 O 5/Pt. The conductance of the cell varies …
memory cell with the structure of (Ti, Ta, W)/Ta 2 O 5/Pt. The conductance of the cell varies …
Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design
Prevailing models of resistive switching arising from electrochemical formation of conducting
filaments across solid state ionic conductors commonly attribute the observed polarity of the …
filaments across solid state ionic conductors commonly attribute the observed polarity of the …
Non-exponential resistive switching in Ag 2 S memristors: a key to nanometer-scale non-volatile memory devices
The dynamics of resistive switchings in nanometer-scale metallic junctions formed between
an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our …
an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our …
Resistive switching in metallic Ag 2 S memristors due to a local overheating induced phase transition
Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic
tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature …
tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature …
Conductance quantization in an AgInSbTe-based memristor at nanosecond scale
Quantized conductance was observed in a cation-migration-based memristor with the
structure of Ag/AgInSbTe (AIST)/Ta. The conductance of the memristor exhibits stepwise …
structure of Ag/AgInSbTe (AIST)/Ta. The conductance of the memristor exhibits stepwise …
Development of a molecular gap-type atomic switch and its stochastic operation
C Arima, A Suzuki, A Kassai, T Tsuruoka… - Journal of Applied …, 2018 - pubs.aip.org
The gap-type atomic switch is a novel neuromorphic device that possesses functions such
as analog changes in resistance and short-term/long-term memory-based learning …
as analog changes in resistance and short-term/long-term memory-based learning …
Gold nanogap-based artificial synapses
K Sakai, T Sato, R Kiyokawa, R Koyama… - Japanese Journal of …, 2020 - iopscience.iop.org
The basic building blocks for brain-inspired computing are neurons and their inter-cellular
connections, called synapses. In this paper, we report artificial synapses composed of …
connections, called synapses. In this paper, we report artificial synapses composed of …