[PDF][PDF] Research Progress of 2–5 μm Mid-Infrared GaSb Semiconductor Materials
P Yu, D Fang, J Tang, X Fang, D Wang, X Wang… - Appl. Phys, 2018 - pdf.hanspub.org
III-V group semiconductors have received a great deal of attention because of their potential
advantages for use in optoelectronic and electronic applications. Among these materials …
advantages for use in optoelectronic and electronic applications. Among these materials …
Analysis of Structural Parameters on InGaAsSb/AlGaAsSb Quantum Well
X Qi, S Liu, Q Zhang, H Li, K Gu, D Fang - Integrated Ferroelectrics, 2024 - Taylor & Francis
Antimonide semiconductor lasers are ideal light sources in the 2–5 μm band, and
antimonide type I quantum well semiconductor lasers are represented by the …
antimonide type I quantum well semiconductor lasers are represented by the …