Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Steep-slope hysteresis-free negative capacitance MoS2 transistors
The so-called Boltzmann tyranny defines the fundamental thermionic limit of the
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 …
Spatially resolved steady-state negative capacitance
Negative capacitance is a newly discovered state of ferroelectric materials that holds
promise for electronics applications by exploiting a region of thermodynamic space that is …
promise for electronics applications by exploiting a region of thermodynamic space that is …
Sub-thermionic, ultra-high-gain organic transistors and circuits
The development of organic thin-film transistors (OTFTs) with low power consumption and
high gain will advance many flexible electronics. Here, by combining solution-processed …
high gain will advance many flexible electronics. Here, by combining solution-processed …
Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide
We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO 2 gate
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When …
Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors
Negative capacitance (NC) FETs with channel lengths from 30 nm to, gated with ferroelectric
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) …
Physics-based circuit-compatible SPICE model for ferroelectric transistors
We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent
Landau-Khalatnikov equation solved self-consistently with the transistor equations. The …
Landau-Khalatnikov equation solved self-consistently with the transistor equations. The …
Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior
We present a detailed TCAD analysis of the impact of length scaling and the associated
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
short-channel effects in the subthreshold regime of the two classes of double-gate negative …
Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices
R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …