A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM)
Schottky barrier photodetectors based on the InGaAs-InP material system, and the …

The photosensitivity characteristics of resonant cavity-enhanced (RCE) photodetectors are
investigated. The photodetectors were formed by integrating the active absorption region …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

A report on a workshop held on March 28-30, 1989 to review the current status and future
prospects for optoelectronic integrated circuit (OEIC) devices, as well as related materials …

Calculations are reported of the transit-time limited frequency response of InGaAs
interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors for 1.55-mu …

We present an overview, mainly of work in our laboratory, of low-threshold GaAs/AlGaAs
quantum-well laser diodes and GaAs metal-semiconductor-metal photodetectors—two …

We present a comprehensive theoretical and experimental analysis of the current response
of GaAs metal‐semiconductor‐metal Schottky photodiodes exposed to 70 fs optical pulses …

Photocurrents in a metal-semiconductor-metal (MSM) photodetector have been analyzed in
a one-dimensional structure using both time-dependent and steady-state continuity …

A report is presented on the fabrication of high-speed In/sub 0.53/Ga/sub 0.47/As metal-
semiconductor-metal (MSM) photodetectors incorporating a high-quality lattice-matched …

The impulse response of interdigitated metal-semiconductor-metal photodetectors fabricated
on an Fe-doped InGaAs absorbing layer and an Fe-doped InP barrier enhancement layer is …