To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …

Evaluating the robustness of power semiconductor devices is key for their adoption into
power electronics applications. Recent static acceleration tests have revealed that SiC metal …

The higher cost of silicon carbide (SiC) devices is a limiting factor for their utilization in
power electronic applications. This has led to the development of hybrid topologies by …

Solid-state circuit breaker (SSCB) is emerging as a new solution for dc distribution network
fault protection due to its ultrafast operation speed and long lifetime. Silicon-carbide-based …

In this paper, we investigate the evolution of threshold voltage (V TH) and on-resistance (R
ON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect …

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has
superior performances in terms of high switching frequency and low power loss, but its …

Gate oxide degradation under dynamic gate stress has been demonstrated as a reliability
issue for SiC MOSFETs recently. Investigating the influence of dynamic drain-source voltage …

In this paper, the ruggedness of 650 V SiC double–trench MOSFETs (DT-MOS) under
repetitive overcurrent switching stress was evaluated and investigated experimentally. The …

In this letter, an inrush current degradation mechanism of trench gate inside silicon carbide
(SiC) metal-oxide-semiconductor-field-effect transistor (Mosfet) is investigated in depth …

In this letter, a model that predicates the degradation of 4H-SiC power metal-oxide-
semiconductor field-effect transistors under repetitive avalanche stress is proposed. Since …