Record-high hole mobility germanium on flexible plastic with controlled interfacial reaction
T Imajo, T Ishiyama, N Saitoh… - ACS Applied …, 2021 - ACS Publications
A semiconductor thin film with high carrier mobility was fabricated on a flexible film. During
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …
Device structures and carrier transport properties of advanced CMOS using high mobility channels
Mobility enhancement technologies have currently been recognized as mandatory for future
scaled MOSFETs. In this paper, the recent mobility enhancement technologies including …
scaled MOSFETs. In this paper, the recent mobility enhancement technologies including …
High carrier mobility in orientation-controlled large-grain (≥ 50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization
High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely
investigated to improve the performance of Si large-scale integrated circuits and mobile …
investigated to improve the performance of Si large-scale integrated circuits and mobile …
Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis
Polycrystalline Ge thin films have recently attracted renewed attention as a material for
various electronic and optical devices. However, the difficulty in the Fermi level control of …
various electronic and optical devices. However, the difficulty in the Fermi level control of …
High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
M Miyao, K Toko, T Tanaka, T Sadoh - Applied Physics Letters, 2009 - pubs.aip.org
Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-
film transistors (TFTs) with high speed operation. We have developed the rapid-melting …
film transistors (TFTs) with high speed operation. We have developed the rapid-melting …
Room temperature-grown highly oriented p-type nanocrystalline tellurium thin-films transistors for large-scale CMOS circuits
Although facile fabrication of high-performance thin-film transistor (TFT)-based
complementary metal oxide–semiconductor (CMOS) circuits over a large area has …
complementary metal oxide–semiconductor (CMOS) circuits over a large area has …
Advanced solid-phase crystallization for high-hole mobility (450 cm2 V− 1 s− 1) Ge thin film on insulator
The hole mobility of the solid-phase-crystallized Ge layer is significantly improved by
controlling the deposition temperature of Ge (50–200 C) and the Ge thickness (50–500 nm) …
controlling the deposition temperature of Ge (50–200 C) and the Ge thickness (50–500 nm) …
Structural and electrical properties of Ge (111) films grown on Si (111) substrates and application to Ge (111)-on-Insulator
K Sawano, Y Hoshi, S Kubo, K Arimoto, J Yamanaka… - Thin Solid Films, 2016 - Elsevier
Structural and electrical properties of a Ge (111) layer directly grown on a Si (111) substrate
are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer …
are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer …
Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth
K Toko, Y Ohta, T Tanaka, T Sadoh, M Miyao - Applied Physics Letters, 2011 - pubs.aip.org
High-quality Ge-on-insulators (GOIs) are essential structures for high-performance
transistors on an Si platform. We developed a rapid-melting-growth process for amorphous …
transistors on an Si platform. We developed a rapid-melting-growth process for amorphous …