Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

The implementation of memristive synapses in neuromorphic computing is hindered by the
limited reproducibility and high energy consumption of the switching behaviour of the …

A detailed understanding of the resistive switching mechanisms that operate in redox-based
resistive random-access memories (ReRAM) is key to controlling these memristive devices …

Redox-based nanoionic resistive memory cells are one of the most promising emerging
nanodevices for future information technology with applications for memory, logic and …

Abstract CsPbX3 (X= halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded
as promising functional materials because of their tunable optoelectronic characteristics and …

Memristive cells based on different physical effects, that is, phase change, valence change,
and electrochemical processes, are discussed with respect to their potential to overcome the …

In situations of power outage or shortage, such as periods just following a seismic disaster,
the only reliable power source available is the most fundamental of forces ie, manual …

Owing to their unique features such as thresholding and self‐relaxation behavior diffusive
memristors built from volatile electrochemical metallization (v‐ECM) devices are drawing …

The basic unit of information in filamentary-based resistive switching memories is physically
stored in a conductive filament. Therefore, the overall performance of the device is …