There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …

In this paper, we improved the performance of a near-infrared graphene/germanium
heterojunction photodetector at atmospheric pressure and at room temperature. We applied …

Reduction in the size, weight, and power (SWaP) consumption of an infrared (IR) detection
system is one of the critical challenges lying ahead for the development of IR detector …

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) is an adjustable
band gap, broad-band III-V infrared detector material that has emerged in recent years as an …

Infrared detector technologies engineered from III-V semiconductors such as strained-layer
superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors …

Improving the production cost and yield in next-generation infrared focal plane arrays have
drawn attention towards the growth of absorbing material on large-area low-cost substrates …

In this study, we introduce a new extended-mid-wavelength InAsSb-based pBn architecture
infrared barrier photodetector with an InAlSb compositional step-graded barrier (SGB) …

The 6.1 Å family of Sb-based III-V materials and heterostructures is a promising candidate
for infrared (IR) detector applications. For the realization of low-cost, large-format IR …

GaSb-based infrared (IR) photodetector technology progression is toward larger-format focal
plane arrays (FPAs). This requires a performance-based and cost-based manufacturing …