Recent progress on micro-LEDs
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
towards displays with high efficiency, small size, and ultrahigh resolution, the development …
A red-emitting micrometer scale LED with external quantum efficiency> 8%
Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
emitting diodes (LEDs) for future display technologies due to their marked benefits over …
An ultrahigh efficiency excitonic micro-LED
High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …
Recent research on indium-gallium-nitride-based light-emitting diodes: Growth conditions and external quantum efficiency
The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …
High‐resolution mapping of strain partitioning and relaxation in InGaN/GaN nanowire heterostructures
B Park, JK Lee, CT Koch, M Wölz… - Advanced …, 2022 - Wiley Online Library
Abstract Growing an InxGa1− xN/GaN (InGaN/GaN) multi‐quantum well (MQW)
heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light …
heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light …
Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale
The absence of efficient red-emitting micrometer-scale light emitting diodes (LEDs), ie, LEDs
with lateral dimensions of 1 μm or less is a major barrier to the adoption of microLEDs in …
with lateral dimensions of 1 μm or less is a major barrier to the adoption of microLEDs in …
InGaN/GaN nanowires as a new platform for photoelectrochemical sensors–detection of NADH
M Riedel, S Hölzel, P Hille, J Schörmann… - Biosensors and …, 2017 - Elsevier
InGaN/GaN nanowire heterostructures are presented as nanophotonic probes for the light-
triggered photoelectrochemical detection of NADH. We demonstrate that photogenerated …
triggered photoelectrochemical detection of NADH. We demonstrate that photogenerated …
Electroluminescence study of InGaN/GaN QW based pin and inverted pin junction based short-wavelength LED device using laser MBE technique
In the present work, the Laser Molecular Beam Epitaxy (Laser MBE) technique has been
used for the fabrication of InGaN/GaN quantum well LEDs. A comparative study was …
used for the fabrication of InGaN/GaN quantum well LEDs. A comparative study was …
Nanoscale optical properties of indium gallium nitride/gallium nitride nanodisk-in-rod heterostructures
III-nitride based nanorods and nanowires offer great potential for optoelectronic applications
such as light emitting diodes or nanolasers. We report nanoscale optical studies of …
such as light emitting diodes or nanolasers. We report nanoscale optical studies of …
Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires
K Maier, A Helwig, G Müller, P Becker, P Hille… - Sensors and Actuators B …, 2014 - Elsevier
We report on an all-optical sensor system that employs GaN/InGaN nanowire
heterostructures (NWH) as optochemical transducers. When exposed to ultraviolet light …
heterostructures (NWH) as optochemical transducers. When exposed to ultraviolet light …