[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

[图书][B] Modern RF and microwave measurement techniques

V Teppati, A Ferrero, M Sayed - 2013 - books.google.com
This comprehensive, hands-on review of the most up-to-date techniques in RF and
microwave measurement combines microwave circuit theory and metrology, in-depth …

Active harmonic load–pull with realistic wideband communications signals

M Marchetti, MJ Pelk, K Buisman… - IEEE Transactions …, 2008 - ieeexplore.ieee.org
A new wideband open-loop active harmonic load-pull measurement approach is presented.
The proposed method is based on wideband data-acquisition and wideband signal-injection …

Ultrawideband LNA 1960–2019

S Shahrabadi - IET Circuits, Devices & Systems, 2021 - Wiley Online Library
To the best of the author's knowledge, several studies during 1960–2019 were carried out
on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio …

DC boosting effect of active bias circuits and its optimization for class-AB InGaP-GaAs HBT power amplifiers

Y Yang, K Choi, KP Weller - IEEE Transactions on Microwave …, 2004 - ieeexplore.ieee.org
In this paper, dc sourcing capability (DSC), which is a very important consideration in design
of active bias circuits for power amplifiers based on bipolar technologies, will be explained …

Nonlinear capacitance effect on stability and stabilization of SiGe power amplifiers for 17.3–21.2 GHz SATCOM

TC Tsai, V Valenta, AÇ Ulusoy - IEEE Transactions on Circuits …, 2024 - ieeexplore.ieee.org
This study investigates the impact of nonlinear capacitances of SiGe-HBT technology on the
stability of power amplifier (PA) designs for 17.3–21.2 GHz satellite communication …

A Wideband Low-Power-Consumption 22–32.5-GHz 0.18- BiCMOS Active Balun-LNA With IM2 Cancellation Using a Transformer-Coupled Cascode-Cascade …

C Geha, C Nguyen… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A low-power-consumption wideband 0.18-μm BiCMOS active balun-low noise amplifier
(LNA) with linearity improvement technique for millimeter-wave applications is proposed …

On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match

MP Van Der Heijden, LCN de Vreede… - IEEE Journal of Solid …, 2004 - ieeexplore.ieee.org
This work describes the theory and design of a nonenergetic dual-loop feedback low-noise
amplifier (LNA) that provides maximum unilateral gain and simultaneous noise and …

Neutralization of feedback capacitance in amplifiers

M van der Heijden - US Patent 7,355,479, 2008 - Google Patents
A transistor amplifier circuit has a current to current feedback transformer for neutralization of
feedback capacitance and setting the input impedance of the amplifier. IM3 cancellation is …

Temperature dependence of the Taylor series coefficients and intermodulation distortion characteristics of GaN HEMT

MA Alim, MM Ali, AA Rezazadeh… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper focused on nonlinear distortion modeling and characterization of AlGaN/GaN
HEMT on SiC substrate using a two-tone intermodulation measurement. The variation of …