An empirical large-signal III–V field-effect transistor (FET) model has been developed. Three
improved drain-source current (I–V) modeling equations capable of representing arbitrarily …

An empirical large-signal model for high-power microwave silicon-carbide MESFETs
capable of predicting self-heating thermal behavior is presented. A generalized drain …

We present an improved empirical non-linear large-signal model suitable for the study of
intermodulation distortion in III–V HEMTs and Si LDMOSFETs. The model allows an …

A comprehensive electrothermal model of III–V FETs is presented which accounts for
gate/drain trapping effects and charge conservation. Two improved drain current models …

This article reports a high efficiency class‐E power amplifier using a SiC MESFET, which is
designed and tested at 2.14 GHz. To improve output power and efficiency by suppressing …

The simulation and experimental analysis of SiC MESFET class E power amplifier with
enhanced frequency band was carried out. A specific multi-resonant output matching …

В докладе изложены результаты разработки и экспериментального исследования
широкополосных усилителей дециметрового (0.5-2.5 ГГц) диапазона с выходными …

В статье представлены результаты по проектированию МИС СВЧ фазовращателей на
основе GaN. Разработана и описана модель транзистора для реализации …

The switching behavior of a previously fabricated and tested SiC transistor is studied in
Class-C amplifier in TCAD simulation. The transistor is simulated for pulse input signals in …

A new, simplified empirical large-signal model for high power microwave SiC MESFFTs is
presented. A generalized drain current source equation is developed, allowing close …