In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic
growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) …

In order to explain the universality of charge separation driven by spontaneous electric field
(Es) between polar crystalline planes, we synthesizd the atomically thick sub-stable …

We have measured the electron affinities of clean, stoichiometric InN and GaN polar
surfaces via ultraviolet photoelectron spectroscopy. The electron affinities of InN were …

We report on the achievement of electroluminescence emission of single InN pin nanowire
devices. InN pin nanowire structures were grown directly on Si substrate by plasma-assisted …

It remains a challenge to characterize the doping type in nanowires (NWs). We report in this
paper a novel way to probe the doping type in GaN NWs by photoassisted kelvin probe force …

The establishment of a general charge separation model is crucial for the design of high-
performance photocatalytic materials. Based on charge separation between polar surfaces …

This paper reports radio frequency (RF) performance and channel breakdown analysis in an
n-type tunneling field-effect transistor based on InN. The tunneling current is evaluated from …

Using density-functional-based total-energy calculations and the LDA-1/2 method to
compute approximately quasiparticle band structures, we have studied clean relaxed InN …

Discovery of a novel way to control the flow of electrons forms the basis for developing novel
types of electronic and optoelectronic devices. Here, taking nonpolar ZnO (10 1 0) crystal …