Solid-state color centers for single-photon generation
Single-photon sources are important for integrated photonics and quantum technologies,
and can be used in quantum key distribution, quantum computing, and sensing. Color …
and can be used in quantum key distribution, quantum computing, and sensing. Color …
All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy
J Aberl, EP Navarrete, M Karaman… - Advanced …, 2024 - Wiley Online Library
Silicon‐based color‐centers (SiCCs) have recently emerged as quantum‐light sources that
can be combined with telecom‐range Si Photonics platforms. Unfortunately, using …
can be combined with telecom‐range Si Photonics platforms. Unfortunately, using …
All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
J Aberl, EP Navarrete, M Karaman… - arXiv preprint arXiv …, 2024 - arxiv.org
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that
can be combined with telecom-range Si Photonics platforms. Unfortunately, using current …
can be combined with telecom-range Si Photonics platforms. Unfortunately, using current …
Programmable Activation of Quantum Emitters in High‐Purity Silicon with Focused Carbon Ion Beams
M Hollenbach, N Klingner, P Mazarov… - Advanced Quantum …, 2024 - Wiley Online Library
Carbon implantation at the nanoscale is highly desired for the engineering of defect‐based
qubits in a variety of materials, including silicon, diamond, silicon carbide (SiC) and …
qubits in a variety of materials, including silicon, diamond, silicon carbide (SiC) and …
Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment
In this perspective article, we discuss the application of ion implantation to manipulate strain
(by either neutralizing or inducing compressive or tensile states) in suspended thin films …
(by either neutralizing or inducing compressive or tensile states) in suspended thin films …
Hopping of the center-of-mass of single G centers in silicon-on-insulator
A Durand, Y Baron, P Udvarhelyi, F Cache… - arXiv preprint arXiv …, 2024 - arxiv.org
Among the wealth of single fluorescent defects recently detected in silicon, the G center
catches interest for its telecom single-photon emission that could be coupled to a metastable …
catches interest for its telecom single-photon emission that could be coupled to a metastable …