Spin-orbit torques: Materials, mechanisms, performances, and potential applications
Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …
significant research activity. We aim to provide a comprehensive review of recent progress in …
Spintronic devices for high-density memory and neuromorphic computing–A review
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …
take advantage of the electron's “spin” to go beyond charge based devices. The most …
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient
manipulation of magnetic order in spintronic devices. To be deterministic, however …
manipulation of magnetic order in spintronic devices. To be deterministic, however …
Spin-orbit torques: Materials, physics, and devices
Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
Magnetoresistive random access memory: Present and future
S Ikegawa, FB Mancoff, J Janesky… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …
memory technology because of its long data retention and robust endurance. Initial MRAM …
Symmetry-breaking interlayer Dzyaloshinskii–Moriya interactions in synthetic antiferromagnets
A Fernández-Pacheco, E Vedmedenko, F Ummelen… - Nature materials, 2019 - nature.com
Abstract The magnetic interfacial Dzyaloshinskii–Moriya interaction (DMI) in multilayered
thin films can lead to chiral spin states, which are of paramount importance for future …
thin films can lead to chiral spin states, which are of paramount importance for future …
Compact modeling and analysis of voltage-gated spin-orbit torque magnetic tunnel junction
Recently, experimental results have demonstrated that perpendicular magnetic tunnel
junction (p-MTJ) with the antiferromagnetic (AFM)/ferromagnetic (FM)/oxide structure can …
junction (p-MTJ) with the antiferromagnetic (AFM)/ferromagnetic (FM)/oxide structure can …
Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque
We present a theoretical investigation of the magnetisation reversal process in CoFeB-
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …
High‐Efficiency Spin–Orbit Torque Switching Using a Single Heavy‐Metal Alloy with Opposite Spin Hall Angles
Spin–orbit torque (SOT) induced perpendicular magnetization switching in Pt1‐
xGdx/Co/Al2O3 heterostructure with x= 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in …
xGdx/Co/Al2O3 heterostructure with x= 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in …
Interfacial and bulk spin Hall contributions to fieldlike spin-orbit torque generated by iridium
We present measurements of spin-orbit torques generated by Ir as a function of film
thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dampinglike …
thickness in sputtered Ir/CoFeB and Ir/Co samples. We find that Ir provides a dampinglike …