Trends in semiconductor defect engineering at the nanoscale
EG Seebauer, KW Noh - Materials Science and Engineering: R: Reports, 2010 - Elsevier
Defect engineering involves manipulating the type, concentration, spatial distribution, or
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …
mobility of defects within a crystalline solid. Defect engineering in semiconductors has …
Multiscale modelling of irradiation in nanostructures
K Nordlund, F Djurabekova - Journal of Computational Electronics, 2014 - Springer
Ion and electron irradiation can be used to modify not only conventional materials such as
silicon, but also nanostructures. This opens up exciting possibilities for basic science studies …
silicon, but also nanostructures. This opens up exciting possibilities for basic science studies …
Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions
BJ Pawlak, R Surdeanu, B Colombeau… - Applied Physics …, 2004 - pubs.aip.org
We investigate the thermal stability of boron-doped junctions formed by Ge
preamorphization and solid phase epitaxial regrowth. Isochronal annealing and …
preamorphization and solid phase epitaxial regrowth. Isochronal annealing and …
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Because of its supreme reproducibility and the rather easy restriction to local areas by
masking, doping by the implantation of ions will remain the method of choice for the next …
masking, doping by the implantation of ions will remain the method of choice for the next …
Evolution of extended defects in polycrystalline Au-irradiated UO2 using in situ TEM: Temperature and fluence effects
C Onofri, C Sabathier, C Baumier, C Bachelet… - Journal of Nuclear …, 2016 - Elsevier
Abstract In situ Transmission Electron Microscopy irradiations were performed on
polycrystalline UO 2 thin foils with 4 MeV gold ions at three different temperatures: 600° C …
polycrystalline UO 2 thin foils with 4 MeV gold ions at three different temperatures: 600° C …
Extended defects formation in nanosecond laser-annealed ion implanted silicon
Damage evolution and dopant distribution during nanosecond laser thermal annealing of
ion implanted silicon have been investigated by means of transmission electron microscopy …
ion implanted silicon have been investigated by means of transmission electron microscopy …
Amorphization, recrystallization and end of range defects in germanium
The controlled doping of germanium by ion implantation is a process which requires basic
research before optimization. For this reason, we have experimentally studied by …
research before optimization. For this reason, we have experimentally studied by …
Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts
R Müller, J Benick, N Bateman, J Schön… - Solar Energy Materials …, 2014 - Elsevier
Ion implantation is a technology suitable for the formation of high quality junctions in silicon
solar cell processing. As screen-printing is the state of the art metallization technique for …
solar cell processing. As screen-printing is the state of the art metallization technique for …
Clusters formation in ultralow-energy high-dose boron-implanted silicon
The formation and evolution of small cluster defects in 500 eV, 1× 10 15 cm− 2 boron-
implanted silicon is investigated. These clusters are identified by high-resolution …
implanted silicon is investigated. These clusters are identified by high-resolution …
End of range defects in Ge
S Koffel, N Cherkashin, F Houdellier… - Journal of Applied …, 2009 - pubs.aip.org
We show that the solid-phase epitaxial regrowth of amorphous layers created by ion
implantation in Ge results in the formation of extended defects of interstitial-type. During …
implantation in Ge results in the formation of extended defects of interstitial-type. During …