Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach
N Gowthaman, VM Srivastava - Nanomaterials, 2022 - mdpi.com
In this work, three-dimensional modeling of the surface potential along the cylindrical
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is …
Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration
In this article, we have demonstrated 125-nm-gate InGaAs-on-insulator (InGaAs-OI) high-
electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of …
electron-mobility transistors (HEMTs) on Si substrates via wafer bonding. The highlights of …
Capacitive modeling of cylindrical surrounding double-gate MOSFETs for hybrid RF applications
N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The advancements in semiconductor technology greatly impact the growth of hybrid VLSI
devices and components. The nanometer technology has been possibly executed due to the …
devices and components. The nanometer technology has been possibly executed due to the …
Electrothermal characterization and optimization of monolithic 3D complementary FET (CFET)
For the first time, the electrothermal characteristics of a three-dimensional (3D) monolithic
complementary FET (CFET) in DC operation as well as in AC CMOS operation were …
complementary FET (CFET) in DC operation as well as in AC CMOS operation were …
Effects of back metal on the DC and RF characteristics of 3D stacked InGaAs RF device for monolithic 3D RF applications
J Jeong, SK Kim, J Kim, DM Geum… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this letter, we demonstrate three-dimensional (3D) stacked InGaAs high-electron-mobility
transistors (HEMTs) on Si with back metal for a monolithic 3D RF platform. The devices are …
transistors (HEMTs) on Si with back metal for a monolithic 3D RF platform. The devices are …
Direct growth of lattice mismatched InP on GaAs substrate with AlAs/GaAs superlattice-induced lateral quasi-quantum-wire buffer
With the technological importance, the demand on the infrared photonic and high-speed
electronic devices is increasing in line with the needs for InP substrate which is used for the …
electronic devices is increasing in line with the needs for InP substrate which is used for the …
Electrical characteristic analysis of Al0. 43Ga0. 57As cylindrical surrounding double-gate (CSDG) MOSFET: A nano-material sensing approach with fabrication …
N Gowthaman, VM Srivastava - International Journal of Hydrogen Energy, 2023 - Elsevier
Research in the optimization of quantum structures based on arbitrary alloys has become
prominent in recent years. The heterostructures have been designed using the multiple …
prominent in recent years. The heterostructures have been designed using the multiple …
Phase decomposition in the Ni–InGaAs system at high annealing temperature
III-V semiconductor compounds are increasingly attracting attention as promising candidates
for serving as channel materials, especially in the development of contact recovery for sub …
for serving as channel materials, especially in the development of contact recovery for sub …
Design of cylindrical surrounding double-gate MOSFET with fabrication steps using a layer-by-layer approach
N Gowthaman, VM Srivastava - IEEE Access, 2022 - ieeexplore.ieee.org
The semiconductors with nanometer-scale are subjected to various patterns and scaling
using the latest technology. The most widely used methods are top-down approaches in the …
using the latest technology. The most widely used methods are top-down approaches in the …
[HTML][HTML] Low specific contact resistance between InAs/Ni–InAs evaluated by multi-sidewall TLM
The specific contact resistance ρ int of the InAs/Ni–InAs interface was evaluated by the multi-
sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and …
sidewall transmission line method (MSTLM), where Ni–InAs was formed by alloying Ni and …