A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
[HTML][HTML] Next generation ferroelectric materials for semiconductor process integration and their applications
Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
Unveiling the double-well energy landscape in a ferroelectric layer
The properties of ferroelectric materials, which were discovered almost a century ago, have
led to a huge range of applications, such as digital information storage, pyroelectric energy …
led to a huge range of applications, such as digital information storage, pyroelectric energy …
[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
devices as they can serve as a synaptic device for neuromorphic implementation and a one …
[HTML][HTML] Progress and future prospects of negative capacitance electronics: A materials perspective
Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …
the power dissipation of electronics beyond fundamental limits. The discovery of …
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating
ferroelectric layers and integrating them into complementary metal oxide semiconductor …
ferroelectric layers and integrating them into complementary metal oxide semiconductor …
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment
The unexpected ferroelectric properties of nanoscale hafnia-zirconia are considered to be
promising for a wealth of applications including ferroelectric memory, field effect transistors …
promising for a wealth of applications including ferroelectric memory, field effect transistors …
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
The origin of the unexpected ferroelectricity in doped HfO2 thin films is now considered to be
the formation of a non-centrosymmetric Pca21 orthorhombic phase. Due to the …
the formation of a non-centrosymmetric Pca21 orthorhombic phase. Due to the …