Wide bandgap oxide semiconductors constitute a unique class of materials that combine
properties of electrical conductivity and optical transparency. They are being widely used as …

Amorphous metal oxides (AMOs) have aroused great enthusiasm across multiple energy
areas over recent years due to their unique properties, such as the intrinsic isotropy …

Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

Hydrogen is an impurity species having an important role in the physical properties of
semiconductors. Despite numerous studies, the role of hydrogen in oxide semiconductors …

High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved
through low-temperature crystallization enabled via a reaction with a transition metal …

Amorphous nanomaterials have aroused extensive interest due to their unique properties.
Their performance is highly related with their distinct atomic arrangements, which have no …

We report an experimental evidence that some hydrogens passivate electron traps in an
amorphous oxide semiconductor, a-In-Ga-Zn-O (a-IGZO). The a-IGZO thin-film transistors …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

We report, in this paper, that crystalline In–Ga–Zn-oxide (IGZO) can be formed over an
amorphous surface or over an uneven surface by a sputtering process at lower than 500 C …