Analysis and design of multi-stage wideband LNA using simultaneously noise and impedance matching method

M Sabzi, A Medi - Microelectronics Journal, 2019 - Elsevier
An analytical approach for design optimization of multi-stage LNAs with common source
topology is developed. This paper reviews and analyses simultaneous noise and input …

A K-Band Hybrid-Packaged Temperature-Compensated Phased-Array Receiver and Integrated Antenna Array

D Zhao, P Gu, Y Yi, J Zhang, C Xu… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
This article presents an eight-channel 1.9-dB noise figure (NF)-band phased-array receiver
(RX) for satellite communication (SATCOM). It employs the hybrid-packaged 65-nm CMOS …

Lna design with cmos soi process-l. 4db nf k/ka band lna

C Li, O El-Aassar, A Kumar, M Boenke… - 2018 IEEE/MTT-S …, 2018 - ieeexplore.ieee.org
In this paper we first discuss about how to select the device type to get best LNA NF for
applications ranging from sub-6GHz to 5G mm-Wave Ka-band. A prototype Ka-band fully …

A low noise figure 28GHz LNA in 22nm FDSOI technology

C Zhang, F Zhang, S Syed, M Otto… - 2019 IEEE Radio …, 2019 - ieeexplore.ieee.org
This paper presents a 28GHz low noise amplifier (LNA) implemented in 22nm FDSOI
technology. The LNA is based on inductively degenerated common source topology with …

A 28-GHz symmetrical Doherty power amplifier using stacked-FET cells

DP Nguyen, T Pham, AV Pham - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

A Compact Ka-Band Integrated Doherty Amplifier With Reconfigurable Input Network

DP Nguyen, BL Pham, AV Pham - IEEE transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …

[HTML][HTML] Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems

JJ Liou, M Ziegler, F Schwierz - Applied Physics Reviews, 2024 - pubs.aip.org
Mankind is currently living in the era of mobile communication. Mobile communication
encompasses almost all areas of our daily life and is heavily used in most sectors of …

A linearity-enhanced 18.7–36.5-GHz LNA with 1.5–2.1-dB NF for radar applications

Z Wang, D Hou, Z Li, P Zhou, Z Chen… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
This letter presents a-/Ka-band gallium arsenide (GaAs) low-noise amplifier (LNA) for high
dynamic range (DR) radar systems. The proposed LNA adopts a two-stage topology to …

Intrinsically linear transistor for millimeter-wave low noise amplifiers

W Choi, R Chen, C Levy, A Tanaka, R Liu… - Nano …, 2020 - ACS Publications
Transistors are the backbone of any electronic and telecommunication system but all known
transistors are intrinsically nonlinear introducing signal distortion. Here, we demonstrate a …

A 6–12 GHz wideband low-noise amplifier with 0.8–1.5 dB NF and±0.75 dB ripple enabled by the capacitor assisting triple-winding transformer

T Zou, H Xu, Y Wang, W Liu, T Han… - … on Circuits and …, 2023 - ieeexplore.ieee.org
This paper presents a wideband 6-12GHz two-stage low noise amplifier (LNA) that utilizes
capacitor assisting triple-winding transformer in the inter-stage matching network. The …