Sputtered 2D transition metal dichalcogenides: from growth to deviceapplications

M Acar, E Gür - Turkish Journal of Physics, 2021 - journals.tubitak.gov.tr
Starting from graphene, 2D layered materials family has been recently set up more than 100
different materials with variety of different class of materials such as semiconductors, metals …

Tunable red/blue emitting of Ca5 (PO4) 3F: Eu2+, Eu3+ and remote-excited color convertor for NUV-WLED

B Lin, Y Zhang, Z Zhao, H Zhao, J Yu - Optical Materials, 2023 - Elsevier
Abstract Eu 2+/Eu 3+ co-doped Ca 5 (PO 4) 3 F (FAP) phosphors with tunable color of
red/blue (R/B) emission were successfully synthesized by the two-step method for potential …

Preparation and luminescent properties of a novel orange-red phosphor Sr2RE8(SiO4)6O2:Eu(2+,3+) (RE = Y, Gd, La) for LEDs

F Wang, H Chen, S Zhang - Chemical Papers, 2021 - Springer
A series of novel orange-red Sr 1.9 RE 8 (SiO 4) 6 O 2: 0.1 Eu (2+, 3+)(RE= Y, Gd, La)
phosphors were synthesized by high-temperature solid-phase reaction method, all of which …

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

EŞ Tüzemen, AG Yüksek, İ Demir, S Horoz… - Journal of the Australian …, 2023 - Springer
Artificial neural networks (ANNs) are a type of machine learning model that are designed to
mimic the structure and function of biological neurons. They are particularly well-suited for …

Improving the external quantum efficiency of high-power GaN-based flip-chip LEDs by using sidewall composite reflective micro structure

L Xu, K Fan, H Sun, Z Guo - Micromachines, 2021 - mdpi.com
For high-power applications, it is important to improve the light extraction efficiency and light
output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed …

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

İ Altuntas, S Elagöz - International Journal of Innovative Engineering …, 2021 - dergipark.org.tr
Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the
properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ …

[PDF][PDF] XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

İ Altuntas - Cumhuriyet Science Journal, 2021 - dergipark.org.tr
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high
temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer …

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

M Genç, V Sheremet, İ Altuntaş, İ Demir… - … and Devices XV, 2020 - spiedigitallibrary.org
In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-
domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes …

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Z Liu - Journal of Physics: Conference Series, 2022 - iopscience.iop.org
The brightness enhancement of the light emitting diode (LED) can satisfy the increasing
demands of illumination of human beings. However, the low-rate recombination of electron …

[PDF][PDF] Improving the external quantum efficiency of high power GaN based Flip-Chip LEDs using ag/SiO2/DBR/SiO2 composite ReflectiveStructure

L Xu, J Zhan, H Sun, Z Chen, Z Guo - 2021 - scholar.archive.org
Results The LED samples were grown on the c-plane of the patterned sapphire substrate
using the metal–organic chemical vapor deposition (MOCVD) method. The epitaxial …