Fabrication and characterization of highly sensitive acetone chemical sensor based on ZnO nanoballs

Q Zhou, CX Hong, Y Yao, AM Ibrahim, L Xu, R Kumar… - Materials, 2017 - mdpi.com
Highly sensitive acetone chemical sensor was fabricated using ZnO nanoballs modified
silver electrode. A low temperature, facile, template-free hydrothermal technique was …

Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors

S Dogar, W Khan, F Khan, SD Kim - Thin Solid Films, 2017 - Elsevier
In this work, we examine the effect of NH 3 plasma post-treatment on the ultraviolet (UV)
photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated …

Photoresponsivity enhancement of AlGaN/GaN heterojunction phototransistor with ZnO nanodot coating layer

WH Jang, JH Choi, CY Han, H Yang… - Journal of Semiconductor …, 2021 - dbpia.co.kr
The effects of a ZnO nanodot coating layer on the photoresponsivity characteristics of an
AlGaN/GaN heterojunction phototransistor was investigated. The ZnO nanodot layer was …

Effect of Sn-Doped Concentration on Structural, Optical and Electrical Properties of ZnO: Sn (TZO) Thin Films Prepared by Sol–Gel Method

X Li, X Zhu, D Yang, J Li - Nanoscience and Nanotechnology …, 2017 - ingentaconnect.com
ZnO: Sn (TZO) thin films were deposited on glass by sol–gel method with 1–5% doped Sn.
The X-ray diffraction (XRD) patterns showed that the intensity of peaks firstly increased and …

Polymer Periodic Nanostructures on Curved Substrates by UV-Curable Hybrid Soft Nanoimprint Lithography

M Zhang, X Liu, A Cao, H Pang, L Shi… - Nanoscience and …, 2017 - ingentaconnect.com
With rapidly developing nonplanar flexible electronics and photonics devices, high-
throughput and low-cost fabrication of polymer periodic nanostructures on curved substrates …

[PDF][PDF] Effect of Nitrogen Plasma on AlGaN/GaN HEMT Devices

AK Visvkarma, R Laishram, C Sharma, N Kumar… - researchgate.net
In this study, we are presenting the effect of N2 plasma on AlGaN/GaN HEMT devices. The
unpassivated HEMT devices were exposed to N2 plasma for 2 minutes, which changed the …