Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
A Shanbhag, F Grandpierron, K Harrouche… - Applied Physics …, 2023 - pubs.aip.org
In this work, physical mechanisms underlying carbon-doped buffer combined with an AlGaN
back-barrier layer are investigated in state-of-the-art millimeter-wave AlN/GaN transistors …
back-barrier layer are investigated in state-of-the-art millimeter-wave AlN/GaN transistors …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications
Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G
and 6G mobile networks, are of great interest to support high-data-rate communications (eg …
and 6G mobile networks, are of great interest to support high-data-rate communications (eg …
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
The impact of different carbon concentrations in the Al0. 06Ga0. 94N graded back-barrier
and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers …
and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers …
[HTML][HTML] Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power …
For operation as power amplifiers in RF applications, high electron mobility transistor
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …
(HEMT) structures are subjected to a range of bias conditions, applied at both the gate and …