The development of integrated circuits based on two-dimensional materials
Abstract Two-dimensional (2D) materials could potentially be used to develop advanced
monolithic integrated circuits. However, despite impressive demonstrations of single devices …
monolithic integrated circuits. However, despite impressive demonstrations of single devices …
Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices
Summary Two-dimensional (2D) materials such as graphene, transition metal
dichalcogenides (TMDs), and their heterojunctions are prospective materials for future …
dichalcogenides (TMDs), and their heterojunctions are prospective materials for future …
Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors
Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Two-dimensional semiconductors could be used as a channel material in low-power
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
Abstract Two-dimensional (2D) structures composed of atomically thin materials with high
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
Atomic Layer Deposited Hafnium Tantalum Oxide Dielectrics
KY Ahn, L Forbes - US Patent 7,560,395, 2009 - Google Patents
3,357,961 A 12/1967 Makowski et al. 4,542,870 A 9, 1985 Howell 5,049,516 A 9, 1991
Arima 5,119,329 A 6, 1992 Evans et al. 5,252,370 A 10/1993 Tominaga et al. 5,304,622 A 4 …
Arima 5,119,329 A 6, 1992 Evans et al. 5,252,370 A 10/1993 Tominaga et al. 5,304,622 A 4 …
Hafnium tantalum oxynitride high-k dielectric and metal gates
L Forbes, KY Ahn, A Bhattacharyya - US Patent 7,605,030, 2009 - Google Patents
Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a
substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may …
substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may …
High-/spl kappa//metal-gate stack and its MOSFET characteristics
R Chau, S Datta, M Doczy, B Doyle… - IEEE Electron …, 2004 - ieeexplore.ieee.org
We show experimental evidence of surface phonon scattering in the high-/spl
kappa/dielectric being the primary cause of channel electron mobility degradation. Next, we …
kappa/dielectric being the primary cause of channel electron mobility degradation. Next, we …
Beyond the conventional transistor
HSP Wong - IBM Journal of Research and Development, 2002 - ieeexplore.ieee.org
This paper focuses on approaches to continuing CMOS scaling by introducing new device
structures and new materials. Starting from an analysis of the sources of improvements in …
structures and new materials. Starting from an analysis of the sources of improvements in …
Liquid-metal-printed ultrathin oxides for atomically smooth 2D material heterostructures
Two-dimensional (2D) semiconductors are promising channel materials for continued
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …
downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However …