Scaling of the metal oxide semiconductor (MOS) field-effect transistor has been the basis of
the semiconductor industry for nearly 30 years. Traditional materials have been pushed to …

We study hydrodynamic and ballistic transport regimes through nonlocal resistance
measurements and high-resolution kinetic simulations in a mesoscopic structure on a high …

Recent achievements in semiconductor spintronics are discussed. Special attention is paid
to spin–orbit interaction, coupling of electron spins to external electric fields, and spin …

The magnetoresistance at temperatures below 20 K in an n-InSb/In 0.85 Al 0.15 Sb two-
dimensional electron system is studied and described in terms of antilocalization due to …

We report on transport experiments through high-mobility gate-tunable undoped InSb
quantum wells (QWs). Due to the elimination of any Si modulation doping, the gate-defined …

We investigate an electrostatically defined quantum point contact (QPC) in a high-mobility
InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and …

We show that in a two-dimensional electron gas (2DEG) the interplay between the Rashba
spin-orbit coupling and a potential barrier (eg, the sample edge) generates interesting spin …

We study the effect of splitting and Zitterbewegung of one-and two-dimensional electron
wave packets in the semiconductor quantum well under the influence of the Rashba spin …

We report the optical measurement of the spin dynamics at elevated temperatures and in
zero magnetic field for two types of degenerately doped n-InSb quantum wells (QWs), one …

InSb is one of the promising candidates to realize a topological state through proximity
induced superconductivity in a material with strong spin–orbit interactions. In two …