Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
Continuous-wave electrically pumped 1550?? nm lasers epitaxially grown on on-axis (001) silicon
Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
[HTML][HTML] MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3 μm quantum dot laser applications
We report the development of gallium arsenide (GaAs) films grown on V-groove patterned
(001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an …
(001) silicon (Si) by metalorganic chemical vapor deposition. This technique can provide an …
Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon
Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si
Hetero-epitaxial growth of high quality InP on a complementary metal-oxide-semiconductor
(CMOS)-compatible Si platform is compelling for monolithic integration of optoelectronics. It …
(CMOS)-compatible Si platform is compelling for monolithic integration of optoelectronics. It …
High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on …
A reliable, efficient and electrically-pumped Si-based laser is considered as the main
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
We report the effects of multi-layer InAs/InAlGaAs quantum dots (QDs) inserted as
dislocation filters into an InP thin film epitaxially grown on (001) Si substrates by …
dislocation filters into an InP thin film epitaxially grown on (001) Si substrates by …
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters
Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon
photonic applications. In addition to the well-developed hybrid bonding techniques, the …
photonic applications. In addition to the well-developed hybrid bonding techniques, the …
GaAs on (001) Si templates for near-infrared InP quantum dot lasers
We investigated the effects of thermal cycle annealing (TCA) at high temperatures on the
defect density and morphology of GaAs epilayers grown on (001) Si substrates. Several …
defect density and morphology of GaAs epilayers grown on (001) Si substrates. Several …