Advances in wide bandgap SiC for optoelectronics

H Ou, Y Ou, A Argyraki, S Schimmel, M Kaiser… - The European Physical …, 2014 - Springer
Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical
properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also …

White light emission of wide‐bandgap silicon carbide: A review

A Kar, K Kundu, H Chattopadhyay… - Journal of the …, 2022 - Wiley Online Library
White light‐emitting diodes (LEDs) are the most promising alternative to the conventional
lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide …

Temperature-dependent photoluminescence properties of porous fluorescent SiC

W Lu, AT Tarekegne, Y Ou, S Kamiyama, H Ou - Scientific reports, 2019 - nature.com
A comprehensive study of surface passivation effect on porous fluorescent silicon carbide
(SiC) was carried out to elucidate the luminescence properties by temperature dependent …

White light emission from fluorescent SiC with porous surface

W Lu, Y Ou, EM Fiordaliso, Y Iwasa, V Jokubavicius… - Scientific reports, 2017 - nature.com
We report for the first time a NUV light to white light conversion in a NB co-doped 6H-SiC
(fluorescent SiC) layer containing a hybrid structure. The surface of fluorescent SiC sample …

Fluorescent SiC and its application to white light-emitting diodes

S Kamiyama, M Iwaya, T Takeuchi… - Journal of …, 2011 - iopscience.iop.org
Abstract Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum
concentrations, has high conversion efficiency from NUV to visible light caused by donor …

Donor-acceptor-pair emission characterization in NB doped fluorescent SiC

Y Ou, V Jokubavicius, S Kamiyama, C Liu… - Optical Materials …, 2011 - opg.optica.org
In the present work, we investigated donor-acceptor-pair emission in NB doped fluorescent
6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved …

Fluorescent SiC as a new material for white LEDs

M Syväjärvi, J Müller, JW Sun, V Grivickas, Y Ou… - Physica …, 2012 - iopscience.iop.org
Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow
phosphor converter is not efficient at high currents and includes rare-earth metals, which are …

Donor-acceptor pairs in wide-bandgap semiconductors for quantum technology applications

A Bilgin, IN Hammock, J Estes, Y Jin… - npj Computational …, 2024 - nature.com
We propose a quantum science platform utilizing the dipole-dipole coupling between donor-
acceptor pairs (DAPs) in wide bandgap semiconductors to realize optically controllable, long …

White light-emitting diode based on fluorescent SiC

S Kamiyama, M Iwaya, T Takeuchi, I Akasaki… - Thin Solid Films, 2012 - Elsevier
A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC
(f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the …

Antireflective sub-wavelength structures for improvement of the extraction efficiency and color rendering index of monolithic white light-emitting diode

Y Ou, DD Corell, C Dam-Hansen, PM Petersen… - Optics express, 2011 - opg.optica.org
We have theoretically investigated the influence of antireflective sub-wavelength structures
on a monolithic white light-emitting diode (LED). The simulation is based on the rigorous …