Recent progress on 3D NAND flash technologies

A Goda - Electronics, 2021 - mdpi.com
Since 3D NAND was introduced to the industry with 24 layers, the areal density has been
successfully increased more than ten times, and has exceeded 10 Gb/mm2 with 176 layers …

Memory technology—a primer for material scientists

T Schenk, M Pešić, S Slesazeck… - Reports on Progress …, 2020 - iopscience.iop.org
From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

3-D NAND technology achievements and future scaling perspectives

A Goda - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
Since the introduction of a 3-D NAND product in 2014, the areal density has increased by
more than 8 times (from 0.96 to 7.80 Gb/mm 2) in the recent five years. The increase of word …

Magnetic racetrack memory: From physics to the cusp of applications within a decade

R Bläsing, AA Khan, PC Filippou, C Garg… - Proceedings of the …, 2020 - ieeexplore.ieee.org
Racetrack memory (RTM) is a novel spintronic memory-storage technology that has the
potential to overcome fundamental constraints of existing memory and storage devices. It is …

A 1.33-Tb 4-bit/cell 3-D flash memory on a 96-word-line-layer technology

N Shibata, K Kanda, T Shimizu, J Nakai… - IEEE Journal of Solid …, 2019 - ieeexplore.ieee.org
A 1.33-Tb 4-bit/cell quadruple-level (QLC) 3-D flash memory in a 96-word-line (WL)-layer
technology that achieves 8.5 Gb/mm 2 has been developed. This is the biggest capacity and …

13.5 A 512Gb 3-bit/cell 3D flash memory on 128-wordline-layer with 132MB/s write performance featuring circuit-under-array technology

C Siau, KH Kim, S Lee, K Isobe… - … Solid-State Circuits …, 2019 - ieeexplore.ieee.org
Advancements in 3D-Flash memory-layer-stacking technology has enabled density scaling
that circumvents the lithography limitations which have prevented 2D-NAND Flash memory …

Reliability of NAND flash arrays: A review of what the 2-D–to–3-D transition meant

CM Compagnoni, AS Spinelli - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
This paper reviews what changed in the reliability of NAND Flash memory arrays after the
paradigm shift in technology evolution determined by the transition from 2-D to 3-D …

A 1Tb 3b/cell 8th-generation 3D-NAND flash memory with 164MB/s write throughput and a 2.4 Gb/s interface

M Kim, SW Yun, J Park, HK Park, J Lee… - … Solid-State Circuits …, 2022 - ieeexplore.ieee.org
As data sizes increase exponentially, the demand for higher-density NAND with a smaller
cell size and a higher interface speed has also increased [1]–[4]. However, the increased …

13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

D Kang, M Kim, SC Jeon, W Jung, J Park… - … Solid-State Circuits …, 2019 - ieeexplore.ieee.org
Data storage is one of the hottest discussion topics in today's connected world. The amount
of data growth is expected to be exponential, while budget and space remain constricted …

The Fundamentals of NAND Flash Memory: Technology for tomorrow's fourth industrial revolution

CW Yoon - IEEE Solid-State Circuits Magazine, 2022 - ieeexplore.ieee.org
With the rise of the mobile-centric era, data-driven applications such as the Internet of
Things, artificial intelligence, cloud computing, blockchain, and so on are ever increasing. As …