The outstanding properties of graphene make it a top candidate for replacing silicon in future
electronic devices. However, for technological applications, graphene must be synthesized …

Graphene supports long spin lifetimes and long diffusion lengths at room temperature,
making it highly promising for spintronics. However, making graphene magnetic remains a …

The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si
(001) substrate is uncovered using high-resolution core-level and angle-resolved …

Few-layer graphene on β-SiC (001) functionalized with phenazine dye Neutral Red by
means of diazonium chemistry has been studied using X-ray photoelectron spectroscopy …

Trilayer graphene exhibits exceptional electronic properties that are of interest both for
fundamental science and for technological applications. The ability to achieve a high on–off …

We have performed first-principles calculations of the structural and the electronic properties
of graphene (G) adsorbed (i) on the oxidized SiC surface (G/X/SiC, with X= Si 2 O 3, Si 2 O …

Graphene is, due to its extraordinary properties, a promising material for future electronic
applications. A common process for the production of large area epitaxial graphene is a high …

We report on a new dynamic-XPS end-station for real-time investigations of advanced
materials. The end-station is based on a new Argus hemispherical electron spectrometer …

Herein, we report a simple method for a covalent modification of surface supported
graphene with photoactive dyes. Graphene was fabricated on cubic-SiC/Si (001) wafers due …

The studies of the properties of graphene synthesized on the surface of epitaxial films of
cubic single-crystal silicon carbide preliminarily grown on Si (001) wafers have been …