Indium nitride (InN) is a low-band-gap semiconductor with unusually high electron mobility,
making it suitable for IR-range optoelectronics and high-frequency transistors. However, the …

The virtual reality visual display system creates a realistic virtual product display system,
allowing users to swim in a three‐dimensional virtual environment and perform interactive …

The increasing interest in atomic layer deposition (ALD) of Pt for the controlled synthesis of
supported nanoparticles for catalysis demands an in-depth understanding of the nucleation …

This work demonstrates the epitaxial growth of ultra-thin AlN films grown on monolayer WS
2/Sapphire by helicon sputtering. In our work, WS 2 acts as a template to facilitate the initial …

Plasma-enhanced atomic layer epitaxy (PEALE) is a cyclic atomic layer deposition process
that incorporates plasma-generated species into one of the cycle substeps to achieve layer …

Plasma-enhanced atomic layer deposition (PEALD) enables the epitaxial growth of ultrathin
indium nitride (InN) films at significantly reduced process temperatures and with greater …

Atomistic control over the growth of semiconductor thin films, such as aluminum nitride, is a
long-sought goal in materials physics. One promising approach is plasma-assisted atomic …

Plasma enhanced atomic layer epitaxy (PEALE) is a layer-by-layer crystalline growth
technique that is based on a pair of self-terminating and self-limiting gas-surface half …

We develop a microscopic theoretical model of AlN, GaN, and InN film growth by atomic
layer epitaxy. To make the model realistic, we take into account the atomic hydrogen that is …

The authors present an in situ study of the effect of nitrogen plasma pulse time on the
temporal evolution of the surface morphology of InN growth on a-plane sapphire at 250 C by …