Defects and aliovalent doping engineering in electroceramics

Y Feng, J Wu, Q Chi, W Li, Y Yu, W Fei - Chemical reviews, 2020 - ACS Publications
Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …

Nanowire solar cells

EC Garnett, ML Brongersma, Y Cui… - Annual review of …, 2011 - annualreviews.org
The nanowire geometry provides potential advantages over planar wafer-based or thin-film
solar cells in every step of the photoconversion process. These advantages include reduced …

Si and SiGe nanowire for micro-thermoelectric generator: a review of the current state of the art

Y Li, G Wang, M Akbari-Saatlu, M Procek… - Frontiers in …, 2021 - frontiersin.org
In our environment, the large availability of wasted heat has motivated the search for
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …

Colloquium: Structural, electronic, and transport properties of silicon nanowires

R Rurali - Reviews of Modern Physics, 2010 - APS
In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

Direct imaging of single Au atoms within GaAs nanowires

M Bar-Sadan, J Barthel, H Shtrikman, L Houben - Nano letters, 2012 - ACS Publications
Incorporation of catalyst atoms during the growth process of semiconductor nanowires
reduces the electron mean free path and degrades their electronic properties. Aberration …

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert… - Nano Research, 2010 - Springer
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-
induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …

[图书][B] Sintering: mechanisms of convention nanodensification and field assisted processes

R Castro, K Van Benthem - 2012 - books.google.com
Sintering process studies have re-emerged strongly in the past decade due to extensive
discussions about the stabilization of nanoparticles and nanostructures, and the …

Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius

V Consonni, M Knelangen, L Geelhaar, A Trampert… - Physical Review B …, 2010 - APS
The formation mechanisms of epitaxial GaN nanowires grown within a self-induced
approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …

Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch

R Ishikawa, R Mishra, AR Lupini, SD Findlay… - Physical Review Letters, 2014 - APS
Diffusion is one of the fundamental processes that govern the structure, processing, and
properties of materials and it plays a crucial role in determining device lifetimes. However …

Direct observation of single dopant atom in light-emitting phosphor of β-SiAlON: Eu2+

K Kimoto, RJ Xie, Y Matsui, K Ishizuka… - Applied Physics …, 2009 - pubs.aip.org
Rare-earth doped nitride attracts considerable attention because of its application as a light-
emitting phosphor. The atomic site of dopants in a crystal is important for the development of …