The nanowire geometry provides potential advantages over planar wafer-based or thin-film solar cells in every step of the photoconversion process. These advantages include reduced …
In our environment, the large availability of wasted heat has motivated the search for methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …
In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters below 10 nm are the focus, where quantum effects become important and the properties …
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration …
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst- induced by means of Ni seeds. Under identical growth conditions of temperature and V/III …
Sintering process studies have re-emerged strongly in the past decade due to extensive discussions about the stabilization of nanoparticles and nanostructures, and the …
V Consonni, M Knelangen, L Geelhaar, A Trampert… - Physical Review B …, 2010 - APS
The formation mechanisms of epitaxial GaN nanowires grown within a self-induced approach by molecular-beam epitaxy have been investigated at the onset of the nucleation …
Diffusion is one of the fundamental processes that govern the structure, processing, and properties of materials and it plays a crucial role in determining device lifetimes. However …
Rare-earth doped nitride attracts considerable attention because of its application as a light- emitting phosphor. The atomic site of dopants in a crystal is important for the development of …