Dilute ferromagnetic semiconductors: Physics and spintronic structures
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …
Theory of ferromagnetic (III, Mn) V semiconductors
T Jungwirth, J Sinova, J Mašek, J Kučera… - Reviews of Modern …, 2006 - APS
The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …
[图书][B] Nanomagnetism and spintronics
T Shinjo - 2013 - books.google.com
The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition,
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …
cover the most recent research in areas of spin-current generation, spin-calorimetric effect …
Tunneling magnetoresistance in (Ga, Mn) As-based heterostructures with a GaAs barrier
We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga, Mn) As
trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at …
trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at …
High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor
We have studied the electronic structure of the diluted magnetic semiconductor Ga 1− x Mn x
N (x= 0.0, 0.02, and 0.042) grown on Sn-doped n-type GaN using photoemission and soft x …
N (x= 0.0, 0.02, and 0.042) grown on Sn-doped n-type GaN using photoemission and soft x …
Magneto-transport and magneto-optical properties of ferromagnetic (III, Mn) V semiconductors: a review
J Sinova, T Jungwirth, J Černe - International Journal of Modern …, 2004 - World Scientific
Rapid developments in material research of metallic ferromagnetic (III, Mn) V
semiconductors over the past few years have brought a much better understanding of these …
semiconductors over the past few years have brought a much better understanding of these …
Local Electronic Structure near Mn Acceptors in InAs: Surface-Induced Symmetry Breaking<? format?> and Coupling to Host States
We present low-temperature scanning tunneling spectroscopy measurements on Mn
acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror …
acceptors in InAs in comparison with tight-binding calculations. We find a strong (001)-mirror …
Phase separation and dilution in implanted MnxGe1− x alloys
The structural and electronic properties of Mn x Ge 1− x alloys (x⩽ 0.15) fabricated by ion
implantation are investigated by means of x-ray diffraction and synchrotron radiation …
implantation are investigated by means of x-ray diffraction and synchrotron radiation …
Fermi surfaces and hybridization in the diluted magnetic semiconductor studied by soft x-ray angle-resolved photoemission spectroscopy
The electronic structure of the new diluted magnetic semiconductor Ba 1− x K x (Zn 1− y Mn
y) 2 As 2 (x= 0.30, y= 0.15) in single crystal form has been investigated by angle-resolved …
y) 2 As 2 (x= 0.30, y= 0.15) in single crystal form has been investigated by angle-resolved …
Single-band model for diluted magnetic semiconductors: Dynamical and transport properties and relevance of clustered states
G Alvarez, E Dagotto - Physical Review B, 2003 - APS
Dynamical and transport properties of a simple single-band spin-fermion lattice model for (III,
Mn) V diluted magnetic semiconductors (DMS's) is here discussed using Monte Carlo …
Mn) V diluted magnetic semiconductors (DMS's) is here discussed using Monte Carlo …