Application of excitation cross sections to optical plasma diagnostics
JB Boffard, CC Lin… - Journal of Physics D …, 2004 - iopscience.iop.org
Many optical-based plasma diagnostic techniques require electron-impact excitation cross
sections. In recent years, a considerable number of new results have become available for …
sections. In recent years, a considerable number of new results have become available for …
Optical emission spectroscopy of Ar–N2 mixture plasma
Optical emission spectroscopy measurements are presented to characterize the different
excitation and ionization processes of both atomic and molecular species in Ar–N2 mixture …
excitation and ionization processes of both atomic and molecular species in Ar–N2 mixture …
Method for deposition of high-performance coatings and encapsulated electronic devices
SE Savas, A Wiesnoski, H Chatham… - US Patent …, 2016 - Google Patents
(57) ABSTRACT A method is disclosed for forming leak-free coatings on poly meric or other
Surfaces that provide optical functions or pro tect underlying layers from exposure to oxygen …
Surfaces that provide optical functions or pro tect underlying layers from exposure to oxygen …
Plasma generating units for processing a substrate
SE Savas, C Galewski, AB Wiesnoski… - US Patent …, 2018 - Google Patents
Apparatus and method for plasma-based processing well suited for deposition, etching, or
treatment of semiconductor, conductor or insulating films. Plasma generating units include …
treatment of semiconductor, conductor or insulating films. Plasma generating units include …
Methods for plasma processing
SE Savas, C Galewski, AB Wiesnoski… - US Patent …, 2014 - Google Patents
Apparatus and method for plasma-based processing well Suited for deposition, etching, or
treatment of semiconductor, conductor or insulating films. Plasma generating units include …
treatment of semiconductor, conductor or insulating films. Plasma generating units include …
Plasma enhanced chemical vapor deposition of SiN-films for passivation of three-dimensional substrates
M Orfert, K Richter - Surface and Coatings Technology, 1999 - Elsevier
Coating of three-dimensional substrates with passivation layers requires an isotropic
deposition process to realize an uniform thickness of the films even at side walls, edges …
deposition process to realize an uniform thickness of the films even at side walls, edges …
Silicon nitride deposited by ECR–CVD at room temperature for LOCOS isolation technology
For LOCOS application, silicon nitride (SiNx) insulators have been deposited by ECR–CVD
at room temperature and with N2 flows of 2.5, 5, 10 and 20sccm on pad-SiO2/Si or on Si …
at room temperature and with N2 flows of 2.5, 5, 10 and 20sccm on pad-SiO2/Si or on Si …
Role of low-energy electrons in Ar emission from low-pressure radio frequency discharge plasma
SA Moshkalyov, PG Steen, S Gomez… - Applied physics …, 1999 - pubs.aip.org
Optical emission spectra from a low-pressure Ar plasma were studied with high spatial
resolution. It has been shown that the intensity ratios of Ar lines excited through metastable …
resolution. It has been shown that the intensity ratios of Ar lines excited through metastable …
Sulfur dioxide plasma treatment of the clay (laponite) particles
K Fatyeyeva, F Poncin-Epaillard - Plasma Chemistry and Plasma …, 2011 - Springer
Low temperature plasma treatment of the inorganic clay (Laponite) using sulfur dioxide (SO
2) as a process gas was carried out in order to graft the functional groups containing sulfur …
2) as a process gas was carried out in order to graft the functional groups containing sulfur …
Effects of deposition rate and ion bombardment on properties of aC: H films deposited by H-assisted plasma CVD method
In our previous study, we realized conformal, subconformal, and anisotropic deposition
profiles of hydrogenated amorphous carbon (aC: H) films formed on trench substrates by …
profiles of hydrogenated amorphous carbon (aC: H) films formed on trench substrates by …