(57) ABSTRACT A semiconductor structure is provided in which an nFET nanosheet stack of
suspended silicon channel material nanosheets is present in an nFET device region and a …

Described herein are nanosheet-FET structures having a wrap-all-around contact where the
contact wraps entirely around the S/D epitaxy structure, thereby increasing contact area and …

A method of forming a source/drain contact is provided. The method includes forming a
sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer …

Devices and methods are provided for fabricating field-effect transistors having source/drain
extension contacts to provide reduced parasitic resistance in electrical paths between …

(57) ABSTRACT A device including source-drain epitaxy contacts with a trench silicide (TS)
liner wrapped around the source-drain contacts, and method of production thereof …

(57) ABSTRACT A method of forming gate structures to a nanosheet device that includes
forming at least two stacks of nanosheets, wherein each nanosheet includes a channel …

Structures for a field-effect transistor and methods of form ing structures for a field-effect
transistor. A first field-effect transistor has a first source/drain region, and a second field …

(57) ABSTRACT A technique relates to a semiconductor device. A first stack includes a first
plurality of nanowires respectively coupled to first source and drain regions, and a second …

Integrated circuit structures including increased transistor source/drain (S/D) contact area
using a sacrificial S/D layer are provided herein. The sacrificial layer, which includes …

Semiconductor devices and methods for forming the semi conductor devices include forming
a sacrificial layer on a substrate on each side of a stack of nanosheets, the stack of …