This paper presents a compact survey of the various material schemes and device structures
that have been explored in the quest toward developing light-emitting diodes (LEDs) based …

In the past 10years, ZnO as a semiconductor has attracted considerable attention due to its
unique properties, such as high electron mobility, wide and direct band gap and large …

ZnO has attracted considerable attention for optical device applications because of several
potential advantages over GaN, such as commercial availability of bulk single crystals and a …

Electrically pumped ZnO quantum well diode lasers are reported. Sb-doped p-type ZnO/Ga-
doped n-type ZnO with an MgZnO/ZnO/MgZnO quantum well embedded in the junction was …

摘要 Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer.
The MgO layer can confine electrons in the ZnO layer, while holes can pass through the …

In this work, ZnO thin films were prepared by sol–gel method and the effect of aging time of
ZnO sol on the structural and optical properties of the films was studied. The structural …

We report manufacturing and characterization of low cost ZnO thin films grown on glass
substrates by sol‐gel spin coating method. For structural properties, X‐ray diffraction …

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially
for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as …

The effect of antimony doping on electrical and dielectric behaviors of ZnO nanocrystals was
investigated using impedance spectroscopy. The XRD diffractograms suggest that the ZnO …

Zinc oxide nano-structured thin films have been synthesized by low-temperature and cost-
effective sol–gel spin coating method. Zinc oxide films with good adherence have been …