Performance evaluation of a GaInP/GaAs solar cell structure with the integration of AlGaAs tunnel junction
A GaInP/GaAs solar cell structure with AlGaAs tunnel junction was grown on p-type (1 0 0)-
oriented GaAs substrate by a solid-source molecular beam epitaxy technique. The structural …
oriented GaAs substrate by a solid-source molecular beam epitaxy technique. The structural …
Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz
Pure polyvinyl alcohol (PVA) capped ZnS semiconductor nanocrystals were prepared by
microwave-assisted method, and the optical and structural properties of the as-prepared …
microwave-assisted method, and the optical and structural properties of the as-prepared …
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
M Benaicha, L Dehimi, F Pezzimenti… - Journal of …, 2020 - iopscience.iop.org
The solar power conversion efficiency of a gallium indium phosphide (GaInP)/silicon (Si)
tandem solar cell has been investigated by means of a physical device simulator …
tandem solar cell has been investigated by means of a physical device simulator …
The temperature dependent negative dielectric constant phenomena of Au/n–GaAs structure with CZO interfacial layer
B Kınacı - Journal of Materials Science: Materials in Electronics, 2021 - Springer
In this study, the copper-doped (wt 3%) ZnO (CZO) thin film was deposited on n–type (100)–
oriented GaAs substrate with the RF sputtering system and this film was annealed at 600° C …
oriented GaAs substrate with the RF sputtering system and this film was annealed at 600° C …
Effect of platinum doping on the structural and electrical properties of SnO2 thin films
The investigation of Pt doping effect on the structural and electrical properties of SnO2 thin
films was aimed in this study. For this purpose, the polycrystalline pure and Pt-doped SnO2 …
films was aimed in this study. For this purpose, the polycrystalline pure and Pt-doped SnO2 …
Frequency effect on electrical and dielectric performance of Au/n–GaAs structure with RF sputtering MoO3 interfacial layer
Ç Çetinkaya - Journal of Materials Science: Materials in Electronics, 2022 - Springer
The effect of frequency on the electrical and dielectric properties of the metal–semiconductor
structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film …
structure with Molybdenum trioxide (MoO3) interfacial layer was investigated. MoO3 thin film …
Temperature dependence of Schottky diode characteristics prepared with photolithography technique
A Richardson constant (RC) of 8.92 Acm− 2K− 2 from the conventional Richardson plot has
been obtained because the current–voltage data of the device quite well obey the …
been obtained because the current–voltage data of the device quite well obey the …
Comprehensive investigation of sputtering deposition pressure effects on a-InGaZnO Schottky diodes
The effects of Ar sputtering deposition pressure on the optical, structural, morphological, and
electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin …
electrical properties of amorphous InGaZnO thin films were investigated. The InGaZnO thin …
Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization
Germanium thin films were deposited on n-type Silicon substrates with three different sputter
power by using DC magnetron sputtering system at room temperature. The structural and …
power by using DC magnetron sputtering system at room temperature. The structural and …
An examination of the GaInP/GaInAs/Ge triple junction solar cell with the analytical solar cell model
The photovoltaic energy is one of the most popular topics of research in the field of clean
energy sources. It benefits directly from the sun, and has been accepted as a promising …
energy sources. It benefits directly from the sun, and has been accepted as a promising …