Frontiers of silicon-on-insulator
GK Celler, S Cristoloveanu - Journal of Applied Physics, 2003 - pubs.aip.org
Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/
dielectric structures that provide new functionality for advanced Si devices. After more than …
dielectric structures that provide new functionality for advanced Si devices. After more than …
Hydrogen blistering of silicon: Progress in fundamental understanding
B Terreault - Physica status solidi (a), 2007 - Wiley Online Library
When silicon is implanted with a sufficient concentration of H ions, at low to moderate
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …
temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled …
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez… - Progress in Crystal …, 2017 - Elsevier
Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …
The generic nature of the Smart-Cut® process for thin film transfer
B Aspar, H Moriceau, E Jalaguier, C Lagahe… - Journal of Electronic …, 2001 - Springer
Abstract The Smart-Cut® process, based on ion implantation (hydrogen, helium) and wafer
bonding, appears more and more as a generic process. The first part of the paper is …
bonding, appears more and more as a generic process. The first part of the paper is …
Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures
Heterogeneous integration of β-Ga2O3 on a highly thermal conductive SiC substrate is an
efficient solution to solve its bottleneck of thermal dissipation for high-power electronics. In …
efficient solution to solve its bottleneck of thermal dissipation for high-power electronics. In …
Mechanics of smart-cut® technology
Smart-Cut® is a recently established, advanced technology for fabricating high-quality
silicon-on-insulator (SOI) systems and has found many other successful applications. It …
silicon-on-insulator (SOI) systems and has found many other successful applications. It …
Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering
This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic
(PV) module reliability and durability. Here in Part 1 we focus on the three primary process …
(PV) module reliability and durability. Here in Part 1 we focus on the three primary process …
Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
N Daghbouj, N Cherkashin, FX Darras… - Journal of Applied …, 2016 - pubs.aip.org
Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers
and fabricate silicon on insulator wafers for the microelectronic industry. The synergy …
and fabricate silicon on insulator wafers for the microelectronic industry. The synergy …
[HTML][HTML] Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
Heterogeneous integration of compound semiconductors on a Si platform leads to advanced
device applications in the field of Si photonics and high frequency electronics. However, the …
device applications in the field of Si photonics and high frequency electronics. However, the …
X-ray scattering study of hydrogen implantation in silicon
N Sousbie, L Capello, J Eymery, F Rieutord… - Journal of applied …, 2006 - pubs.aip.org
The effect of hydrogen implantation in silicon single crystals is studied using high-resolution
x-ray scattering. Large strains normal to the sample surface are evidenced after …
x-ray scattering. Large strains normal to the sample surface are evidenced after …