This study investigated the effect of hydrogen (H) on the performance of amorphous In–Ga–
Zn–Sn oxide (a-In0. 29Ga0. 35Zn0. 11Sn0. 25O) thin-film transistors (TFTs). Ample H in …

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO)
active layer were prepared at room temperature by radio frequency magnetron sputtering …

Spin coating method was employed to deposit the thin films using redispersed nanoparticle
suspensions of tin doped indium oxide (ITO). These films were then annealed in air at 450 …

Indium zinc tin oxide (IZTO) semiconducting thin films have been investigated as active
channel layers for thin-film transistor (TFT) applications. The IZTO layer was deposited by …

The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films
were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and …

The main purpose of this work is to make clear that in the newly synthesized multicomponent
materials IZTO, namely, Sn/Zn cosubstituted In2O3, how can these cosubstituted dopants …

Indium tin zinc oxide (ITZO)-based thin-film transistors (TFTs) were fabricated by dc
magnetron sputtering in Ar+ O 2 reactive gas, at room temperature. We present the effect of …

Indium zinc tin oxide (IZTO) thin films were deposited on glass substrate by radio frequency
magnetron sputtering at various substrate temperatures. The indium content of the IZTO …

The electronic and optical properties of indium zinc tin oxide (IZTO) thin films grown under
different gas environments were investigated by means of x-ray photoelectron spectroscopy …

Transparent conductive oxide ZnSnO 3 films were prepared by radio-frequency magnetron
sputtering from powder targets and were characterized by X-ray photoelectron spectroscopy …