We report high performance ultraviolet (UV) photodetectors (PDs) based on p-GaN-gated
AlGaN/GaN heterostructures grown on silicon substrates. Benefitting from the high electrical …

Electric fields drive the degradation of wide-bandgap semiconductor devices. However,
directly mapping the electric field inside an active device region remains challenging. Here …

We report a novel high sensitive ultraviolet (UV) photodetector based on AlGaN/n-GaN/p-
GaN heterostructure high electron mobility transistor (HEMT) on sapphire substrates and …

Optoelectronic performance of ultraviolet phototransistors (UVPTs) based on AlGaN/GaN
high-electron-mobility transistor (HEMT) configuration is comprehensively studied under …

AlGaN/GaN high electron mobility transistor (HEMT) has attracted great attention in
ultraviolet photodetectors (UVPDs) due to the ultrahigh responsivity and high photocurrent …

As one type of organic–inorganic hybrid lead halide perovskites, MAPbX3 has attracted
immense interests in applications of optoelectronic devices because of its remarkable …

This paper presents the effects of optical radiation on the behavior of two scaled-gate
aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistors …

In this work, a novel ultraviolet (UV) photodetector (PD) based on AlGaN/u-GaN/p-GaN/u-
GaN heterojunction high electron mobility transistor (HEMT) has been developed. This …

We report on the growth of crystalline κ-Ga 2 O 3 using mist-chemical vapor deposition
(CVD) on (0001) sapphire. The κ-phase was confirmed using high-resolution x-ray …

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the
spectral variation of photocurrent responsivity data that redshift and broaden with increasing …