8.1 μm-emitting InP-based quantum cascade laser grown on Si by metalorganic chemical vapor deposition
This study presents the growth and characterization of an 8.1 μm-emitting,
InGaAs/AlInAs/InP-based quantum cascade laser (QCL) formed on an InP-on-Si composite …
InGaAs/AlInAs/InP-based quantum cascade laser (QCL) formed on an InP-on-Si composite …
Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate
Monolithic integration of III–V quantum dot (QD) lasers onto a Si substrate is a scalable and
reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a …
reliable approach for obtaining highly efficient light sources for Si photonics. Recently, a …
Comparison of quantum well structures for room temperature continuous wave 980 nm lasers grown on (001) Si by MOCVD
J Huang, Q Lin, W Luo, W Gu, L Lin, KM Lau - Applied Physics Letters, 2023 - pubs.aip.org
We report room temperature (RT) continuous-wave (CW) lasing of quantum well (QW) lasers
grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including …
grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including …