Photonic van der Waals integration from 2D materials to 3D nanomembranes

Y Meng, J Feng, S Han, Z Xu, W Mao, T Zhang… - Nature Reviews …, 2023 - nature.com
The integration of functional nanomaterials and heterostructures with photonic architectures
has laid the foundation for important photonic and optoelectronic applications. The advent of …

Flexible and stretchable light-emitting diodes and photodetectors for human-centric optoelectronics

S Chang, JH Koo, J Yoo, MS Kim, MK Choi… - Chemical …, 2024 - ACS Publications
Optoelectronic devices with unconventional form factors, such as flexible and stretchable
light-emitting or photoresponsive devices, are core elements for the next-generation human …

[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs

HS Wasisto, JD Prades, J Gülink, A Waag - Applied Physics Reviews, 2019 - pubs.aip.org
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Y Zhang, A Dadgar, T Palacios - Journal of Physics D: Applied …, 2018 - iopscience.iop.org
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

H Kum, D Lee, W Kong, H Kim, Y Park, Y Kim… - Nature …, 2019 - nature.com
The demand for improved electronic and optoelectronic devices has fuelled the
development of epitaxial growth techniques for single-crystalline semiconductors. However …

Transfer printing techniques for flexible and stretchable inorganic electronics

C Linghu, S Zhang, C Wang, J Song - npj Flexible Electronics, 2018 - nature.com
Transfer printing is an emerging deterministic assembly technique for micro-fabrication and
nano-fabrication, which enables the heterogeneous integration of classes of materials into …

GaN-based light-emitting diodes on various substrates: a critical review

G Li, W Wang, W Yang, Y Lin, H Wang… - Reports on Progress …, 2016 - iopscience.iop.org
GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

Mass transfer techniques for large-scale and high-density microLED arrays

F Chen, J Bian, J Hu, N Sun, B Yang… - … Journal of Extreme …, 2022 - iopscience.iop.org
Inorganic-based micro light-emitting diodes (microLEDs) offer more fascinating properties
and unique demands in next-generation displays. However, the small size of the microLED …

Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond

M Kim, JH Seo, U Singisetti, Z Ma - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …

Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices

K Chung, CH Lee, GC Yi - Science, 2010 - science.org
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs)
using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene …