Au ion irradiation induces ultralow thermal conductivity in GaN
W Yan, Y Xue, W Zhou, Y Wang, H Guo, H Yang… - Applied Physics …, 2024 - pubs.aip.org
Gallium nitride (GaN) is widely considered as a crucial semiconductor for the nuclear
industry and space explorations due to its superior radiation hardness. Despite extensive …
industry and space explorations due to its superior radiation hardness. Despite extensive …
Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations
The widespread adoption of gGaN in radiation‐hard semiconductor devices relies on a
comprehensive understanding of its response to strongly ionizing radiation. Despite being …
comprehensive understanding of its response to strongly ionizing radiation. Despite being …
Failure mechanisms of AlGaN/GaN HEMTs irradiated by high-energy heavy ions with and without bias
PP Hu, LJ Xu, SX Zhang, PF Zhai, L Lv, XY Yan… - Nuclear Science and …, 2025 - Springer
Gallium nitride (GaN)-based devices have significant potential for space applications.
However, the mechanisms of radiation damage to the device, particularly from strong …
However, the mechanisms of radiation damage to the device, particularly from strong …
Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation
The radiation hardness of GaN-based devices is a critical metric for applications in extreme
environments. This study investigates the structural changes in GaN and AlN induced by …
environments. This study investigates the structural changes in GaN and AlN induced by …
[HTML][HTML] Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission
M Sall, G Sow, A Baillard, A Dujarrier, L Goodwin… - Nano Trends, 2025 - Elsevier
Abstract InN and InGaN/GaN multi-quantum wells (MQWs) were subjected to Swift Heavy
Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy …
Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy …
Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation
The structural modifications and the evolution of mechanical behavior of gallium nitride
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …
(GaN) thin films irradiated by 92 MeV 129 Xe 23+ at different fluences have been …
Microstructure Evolution in He-Implanted Si at 600° C Followed by 1000° C Annealing
Z Yang, Z Zou, Z Zhang, Y Xing, T Wang - Materials, 2021 - mdpi.com
Si single crystal was implanted with 230 keV He+ ions to a fluence of 5× 1016/cm2 at 600°
C. The structural defects in Si implanted with He at 600° C and then annealed at 1000° C …
C. The structural defects in Si implanted with He at 600° C and then annealed at 1000° C …