Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
Transition from Metal-Rich to N-Rich Growth for Core–Shell InGaN Nanowires on Si (111) at the Onset of In Desorption
R Deng, X Pan, H Hong, G Yang, X Pu… - Crystal Growth & …, 2023 - ACS Publications
The growth of InGaN on Si in the regime slightly above the onset of In desorption naturally
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
leads to the formation of core–shell InGaN nanowires (NWs) by plasma-assisted molecular …
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
The authors report compact and chemically homogeneous In-rich InGaN layers directly
grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical …
grown on Si (111) by plasma-assisted molecular beam epitaxy. High structural and optical …
Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation
Nitride alloys are considered potential candidates as photoelectrodes for
photoelectrochemical water splitting. Here we show an In0. 25Ga0. 75N layer activated by …
photoelectrochemical water splitting. Here we show an In0. 25Ga0. 75N layer activated by …
Droplet controlled growth dynamics in molecular beam epitaxy of nitride semiconductors
M Azadmand, L Barabani, S Bietti, D Chrastina… - Scientific Reports, 2018 - nature.com
The growth dynamics of Ga (In) N semiconductors by Plasma-Assisted Molecular Beam
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
Epitaxy (PAMBE) at low temperatures (T= 450° C) is here investigated. The presence of …
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si (111)
The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-
content In 0.73 Ga 0.27 N layer, directly on a Si (111) substrate by plasma-assisted …
content In 0.73 Ga 0.27 N layer, directly on a Si (111) substrate by plasma-assisted …
[HTML][HTML] Theoretical maximum photogeneration efficiency and performance characterization of InxGa1− xN/Si tandem water-splitting photoelectrodes
In x Ga 1− x N is a promising material for flexible and efficient water-splitting photoelectrodes
since the bandgap is tunable by modifying the indium content. We investigate the potential …
since the bandgap is tunable by modifying the indium content. We investigate the potential …
Engineering of III-Nitride semiconductors on low temperature co-fired ceramics
This work presents results in the field of advanced substrate solutions in order to achieve
high crystalline quality group-III nitrides based heterostructures for high frequency and …
high crystalline quality group-III nitrides based heterostructures for high frequency and …
[HTML][HTML] Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity
W Zhang, R Deng, M Luo, H Hong, X Pan, R Nötzel - AIP Advances, 2024 - pubs.aip.org
An efficient visible-light photoelectrochemical photodetector based on a compact In-rich n-
InGaN layer activated by p-Cu 2 O microcrystals operating as photoanode in the self …
InGaN layer activated by p-Cu 2 O microcrystals operating as photoanode in the self …
Modeling of the interminiband absorption coefficient in InGaN quantum dot superlattices
G Giannoccaro, F De Leonardis, VMN Passaro - Photonics, 2016 - mdpi.com
In this paper, a model to estimate minibands and theinterminiband absorption coefficient for
a wurtzite (WZ) indium gallium nitride (InGaN) self-assembled quantum dot superlattice …
a wurtzite (WZ) indium gallium nitride (InGaN) self-assembled quantum dot superlattice …