Prospects and applications of on-chip lasers
Integrated silicon photonics has sparked a significant ramp-up of investment in both
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …
academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart …
Perspectives on advances in quantum dot lasers and integration with Si photonic integrated circuits
Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via
direct epitaxial growth is a promising solution for on-chip light sources. Recent …
direct epitaxial growth is a promising solution for on-chip light sources. Recent …
[HTML][HTML] Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review
L Seravalli - Microelectronic Engineering, 2023 - Elsevier
InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources
Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial
growth is the ultimate solution for realizing on‐chip light sources. Tremendous …
growth is the ultimate solution for realizing on‐chip light sources. Tremendous …
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
We propose a novel methodology capable of separately evaluating the contribution of the
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
different recombination processes in quantum dot laser diodes (QD LDs) driven below …
Quantum dot lasers directly grown on 300 mm Si wafers: Planar and in-pocket
We report for the first time the direct growth of quantum dot (QD) lasers with electrical
pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane …
pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane …
Quantum well interband semiconductor lasers highly tolerant to dislocations
L Cerutti, DA Díaz Thomas, JB Rodriguez, M Rio Calvo… - Optica, 2021 - opg.optica.org
<? TeX-2pc-0pc?> III-V semiconductor lasers integrated on Si-based photonic platforms are
eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip …
eagerly awaited by the industry for mass-scale applications, from interconnect to on-chip …
[HTML][HTML] Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate
C Jiang, H Liu, Z Liu, X Ren, B Ma, J Wang, J Li, S Liu… - APL Materials, 2023 - pubs.aip.org
The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially
of those on an on-axis Si (001) substrate, is of great importance now a days for the …
of those on an on-axis Si (001) substrate, is of great importance now a days for the …
Improved performance of InGaAs/AlGaAs quantum well lasers on silicon using InAlAs trapping layers
Z Liu, H Liu, C Jiang, B Ma, J Wang, R Ming, S Liu… - Optics …, 2023 - opg.optica.org
InGaAs/AlGaAs multiple quantum well lasers grown on silicon (001) by molecular beam
epitaxy have been demonstrated. By inserting InAlAs trapping layers into AlGaAs cladding …
epitaxy have been demonstrated. By inserting InAlAs trapping layers into AlGaAs cladding …