Spintronics aims to go beyond the charge-based paradigm of silicon-based microelectronics
by utilizing the spin degree of freedom for memory, storage and computing applications …

Ferromagnets are known to support spin-polarized currents that control various spin-
dependent transport phenomena useful for spintronics. On the contrary, fully compensated …

Antiferromagnets constitute promising contender materials for next‐generation spintronic
devices with superior stability, scalability, and dynamics. Nevertheless, the perception of …

Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and
commonly relies on the spin current injected from a second heavy-metal material. The fact …

In recent years, antiferromagnetic spintronics has attracted enormous attentions due to the
great potential for next-generation picosecond and highly packed information technology …

Recently, orbital Hall current has attracted attention as an alternative method to switch the
magnetization of ferromagnets. Here we present our findings on electrical switching of the …

Among antiferromagnetic materials, Mn 2 Au is one of the most intensively studied, and it
serves as a very popular platform for testing various ideas related to antiferromagnetic …

Materials exhibiting a spontaneous reversal of spin chirality have the potential to drive the
widespread adoption of chiral magnets in spintronic devices. Unlike the majority of chiral …

YMn 6 Sn 6 consists of two types of Mn-based kagome planes stacked along the c-axis
having a complex magnetic interaction. We report a spin reconstruction in YMn 6 Sn 6 from …

We numerically investigate and develop analytic models for both the DC and pulsed spin–
orbit-torque (SOT)-driven response of order parameter in single-domain Mn 3 Sn, which is a …