Infrared photodetectors (IRPDs) have become important devices in various applications
such as night vision, military missile tracking, medical imaging, industry defect imaging …

This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …

In the last two decades, several new concepts for improving the performance of infrared
detectors have been proposed. These new concepts particularly address the drive towards …

Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

A high operating temperature mid-wavelength infrared pBn photodetector based on the type-
II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the …

We demonstrate the high-performance longwavelength InAs/GaSb superlattice (SL) infrared
photodetectors based on an Al-free single heterojunction grown by metalorganic chemical …

Unipolar nBn photodetector structures have recently emerged as a viable alternative to the
traditional pn junction infrared photodiode approach. However, realization of a unipolar nBn …

InAs 0.6 Sb 0.4/Al 0.75 In 0.25 Sb-based barrier photodetectors were grown
metamorphically on compositionally graded Ga 1− x In x Sb buffer layers and GaSb …