Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: Desaturation versus Rogowski switch-current sensor
Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for
modern power electronics systems due to large economic implications. SiC mosfet modules …
modern power electronics systems due to large economic implications. SiC mosfet modules …
Busbar design and optimization for voltage overshoot mitigation of a silicon carbide high-power three-phase T-type inverter
The silicon carbide (SiC) devices have faster switching speed than that of the conventional
silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger …
silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger …
Design of a high-efficiency, high specific-power three-level T-type power electronics building block for aircraft electric-propulsion drives
A Deshpande, Y Chen… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
The electric propulsion drives for the more-electric aircraft need lightweight and high-
efficiency power converters. Moreover, a modular approach to the construction of the drive …
efficiency power converters. Moreover, a modular approach to the construction of the drive …
Design and evaluation of laminated busbar for three-level T-type NPC power electronics building block with enhanced dynamic current sharing
This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …
Design and testing of 1 kV H-bridge power electronics building block based on 1.7 kV SiC MOSFET module
This paper presents a power electronics building block (PEBB) design based on 1.7 kV SiC
MOSFET power modules. The PEBB power stage is an H-bridge circuit that can be …
MOSFET power modules. The PEBB power stage is an H-bridge circuit that can be …
Gate-driver integrated junction temperature estimation of SiC MOSFET modules
SiC MOSFET power modules are becoming global solutions in systems operating in harsh
environment, and due to large economic implications, achieving reliability of such systems is …
environment, and due to large economic implications, achieving reliability of such systems is …
Overvoltage and oscillation suppression circuit with switching losses optimization and clamping energy feedback for SiC MOSFET
C Yang, Y Pei, L Wang, L Yu, F Zhang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The snubber circuit is a cost-effective solution to reduce the severe turn-off overvoltage and
oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-on …
oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-on …
Power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET modules
This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7
kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be …
kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be …