Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of
less than about 200 C. and is treated with helium plasma to reduce stress of the deposited …

The present invention relates to curing of semiconductor wafers. More particularly, the
invention relates to cure chambers containing multiple cure stations, each featuring one or …

A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch
selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The …

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential
deposition/anneal technique. The deposited layer thickness is insufficient to prevent …

3,983,385 A 9, 1976 Troue 4,357,451 A 11, 1982 McDaniel 4,391,663 A 7/1983 Hutter, III
4,563,589 A 1, 1986 Scheffer 4.885, 262 A 12/1989 Ting et al. 5,178,682 A 1/1993 …

US PATENT DOCUMENTS 3,983,385 A 9, 1976 Troue 4,357,451 A 11, 1982 McDaniel
4,391,663 A 7/1983 Hutter, III 4,563,589 A 1, 1986 Scheffer 4,837,185 A 6, 1989 Yau et al …

A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables
process-induced damage repair. The method is particularly applicable in the context of …

Methods and apparatus for preparing a porous low-k dielectric material on a substrate are
provided. The methods optionally involve the use of ultraviolet radiation to react with and …

Methods of preparing a porous low-k dielectric material on a substrate are provided. The
methods involve the use of ultraviolet radiation to react with and remove porogen from a …

A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H
content at a process temperature below 500 C., eg, about 400 C. produces low H content …