Band parameters for nitrogen-containing semiconductors
I Vurgaftman, JR Meyer - Journal of applied physics, 2003 - pubs.aip.org
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Status and outlook of metal–inorganic semiconductor–metal photodetectors
Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …
attention in many areas, such as optical fiber communication, sensing, missile guidance …
Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy… - Journal of applied …, 1999 - pubs.aip.org
AlGaN/GaN heterostructure field-effect transistors HFETs have been a subject of intense
recent investigation and have emerged as attractive candidates for high voltage, high-power …
recent investigation and have emerged as attractive candidates for high voltage, high-power …
[图书][B] The blue laser diode: GaN based light emitters and lasers
S Nakamura, G Fasol - 2013 - books.google.com
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …
materials has recently propelled these materials into the mainstream of interest. It is very …
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy… - Journal of applied …, 2000 - pubs.aip.org
Two dimensional electron gases in Al x Ga 1− x N/GaN based heterostructures, suitable for
high electron mobility transistors, are induced by strong polarization effects. The sheet …
high electron mobility transistors, are induced by strong polarization effects. The sheet …
Growth and applications of group III-nitrides
O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
effect transistors is examined theoretically and experimentally. Based on an analysis of the …
The blue laser diode. The complete story
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …
that he enjoys this fact and wishes his readers to become familiar with his success …